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TEM Studies of Ordering in MOCVD-Grown (GaIn)P on GaAs

Published online by Cambridge University Press:  26 February 2011

S. McKernan ,
B. C. De Cooman ,
C. B. Carter ,
D. P. Bour  and
J. R. Shealy
S. McKernan
Affiliation:
Dept. of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
B. C. De Cooman
Affiliation:
Dept. of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
C. B. Carter
Affiliation:
Dept. of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
D. P. Bour
Affiliation:
School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, NY 14853
J. R. Shealy
Affiliation:
School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, NY 14853
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Abstract

GaxIn(1−x)P epilayers grown on GaAs substrates by MOVPE, for different growth temperatures and values of x∼0.5, have been studied by electron microscopy. The results indicate that under certain conditions the ternary epilayer is ordered parallel to the (111) plane. Dark-field images obtained using the superlattice reflections reveal ordered domains of different orientations. High-resolution images have been obtained from the ordered domains. The structure of these domains is not perfect but contains many planar faults parallel to the growth surface.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 637
Copyright
Copyright © Materials Research Society 1988

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References

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