Hostname: page-component-54dcc4c588-54gsr Total loading time: 0 Render date: 2025-10-11T18:21:09.382Z Has data issue: false hasContentIssue false
  • English
  • Français

Tem and Hrem Study Of mGH-Temperature Aluminum Ion Implantation to 6H-SiC

Published online by Cambridge University Press:  10 February 2011

A. A. Suvorova ,
I. O. Usov ,
O. I. Lebedev ,
G. Van Tendeloo  and
A. V. Suvorov
A. A. Suvorova
Affiliation:
Ioffe Physical-Technical Institute, St. Petersburg, 194021 Russia
I. O. Usov
Affiliation:
Ioffe Physical-Technical Institute, St. Petersburg, 194021 Russia
O. I. Lebedev
Affiliation:
University of Antwerp (RUCA), B-2020 Antwerp, Belgium on leave from Institute of Crystallography RAS, 117333 Moscow, Russia
G. Van Tendeloo
Affiliation:
University of Antwerp (RUCA), B-2020 Antwerp, Belgium
A. V. Suvorov
Affiliation:
CREE Research Inc., Durham, 27703 NC, USA
Get access

Abstract

6H silicon carbide wafers were implanted with 40–50 keV aluminum ions to a dose of 1.5 × 1014 – 1.5 × 1016 cm−2 at high temperatures (1100°C–1700°C). The substrate temperature and the implantation dose were varied to investigate the influence of the implantation parameters on the formation of structural defects. Conventional transmission electron microscopy (TEM) and high resolution electron microscopy (HREM) techniques were applied to study the defects. We found that for low dose implants {0001} interstitial dislocation loops are formed but for high dose implants aluminum precipitates associated with {0001} half-loops are formed.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Suvorov, A. V., Ivanov, P. A., Morozenko, Y. V., and Makarov, V. N. (1986) Third All-Union Conference on Wide-Gap Semiconductors (in Russian), Mahachkala, p.28–29.Google Scholar
2. Edmond, J. A., Withrow, S. P., Wadlin, W., Davis, R. F. in Interfaces, Superlattices, and Thin Films, edited by Dow, John D. and Schuller, Ivan K. (Mater. Res. Soc. Symp. Proc. 77 Pittsburgh, PA 1987), p.193–198.Google Scholar
3. Suttrop, W, Zhang, H, Schadt, M, Pensl, G, Dohuke, K and Leibenzeder, S, Springer Proceeding in Physics 71 (Springer-Verlag Berlin, Heidelberg) p. 143, 1992.Google Scholar
4. Suvorov, A. V., Usov, I. O., Sokolov, V. V., Suvorova, A. A. in Ion-Solid Interaction for Materials Modification and Processing, edited by Poker, D. B., Ila, D., Cheng, Y-S., Harriot, L. R. and Sigmon, T. W., (Mater. Res. Soc. Symp. Proc. 396, Pittsburgh, PA 1996), p. 23 9–2 42 .Google Scholar
5. Suvorov, A. V., Lebedev, O. I., Suvorova, A. A., Landuyt, J. Van, Usov, I. O. 1997, Nucl. Instr. And Meth. in Phys. Res. B 127/128, p. 347 (1997).Google Scholar
6. Lebedev, O. I., Tendeloo, G. Van, Suvorova, A. A., Usov, I. O., Suvorov, A. V., J. Electron Microscopy, 46(4), p.271–279 (1997).Google Scholar
7. Suvorova, A. A., Lebedev, O. I., Suvorov, A. V. and Usov, I. O., in Proceedings of the X Conf., Microscopy of Semiconducting Materials, Oxford, 7–10 April 1997, edited by Cullis, A. G. and Hutchison, J. L. (Inst. of Phys. Conf Ser. No.157, Pittsburgh, PA 1997), p.531–534.Google Scholar