Hostname: page-component-54dcc4c588-ff9ft Total loading time: 0 Render date: 2025-10-13T23:45:58.374Z Has data issue: false hasContentIssue false
  • English
  • Français

Synthesis of Continuous SmSi2 Layers on Si bySamarium Ion Implantation Using A Metal Vapor Vacuum Arc IonSource

Published online by Cambridge University Press:  17 March 2011

X.Q. Cheng ,
H.N. Zhu  and
B.X. Liu
X.Q. Cheng
Affiliation:
Department of Materials Science and Engineering Tsinghua University, Beijing 100084, CHINA
H.N. Zhu
Affiliation:
Department of Materials Science and Engineering Tsinghua University, Beijing 100084, CHINA
B.X. Liu
Affiliation:
Department of Materials Science and Engineering Tsinghua University, Beijing 100084, CHINA
Get access

Abstract

Samarium ion implantation was conducted to synthesize Sm-disilicide films onsilicon wafers, using a metal vapor vacuum arc ion source and the continuous SmSi2 films were directly obtained with neither externalheating during implantation nor post-annealing. Diffraction and surfacemorphology analysis confirmed the formed Sm-disilicilde films were of a finecrystalline structure under appropriate experimental conditions. Besides,the formation mechanism of the SmSi2phase is also discussed interms of the temperature rise caused by ion beam heating and the effect ofion dose on the properties of the SmSi2films.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O5.29
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1.Knapp, J.A., Picraux, S.T., Appl. Phys. Lett. 48, 466 (1986).Google Scholar
2.Siegal, M.P., Kaatz, F.H., Graham, W.R., Santiago, J.J., d'Spiegel, J.V., Appl. Surf. Sci. 38, 1629 (1989).Google Scholar
3.Duboz, J.Y., Badoz, P.A., d'Avitaya, F.A., Appl. Phys. Lett. 55, 84 (1989).Google Scholar
4.Baglin, J.E.E., d'Heurle, F.M. and Petersson, C.S., Appl. Phys. Lett. 36, 594 (1980).Google Scholar
5.Thompson, R.D., Tsaur, B.Y. and Tu, K.T., Appl. Phys. Lett. 38, 535 (1981).Google Scholar
6.Baglin, J.E.E., d'Heurle, F.M. and Petersson, C.S., J. Appl. Phys. 52, 2841 (1981).Google Scholar
7.Lau, S.S., Pai, C.S., Wu, C.S., Kuech, T.F. and Liu, B.X., Appl. Phys. Lett. 41, 1 (1982).Google Scholar
8.White, A.E., Shprt, K.T., Dynes, R.C., Garno, J.P. and Gibson, J.M., Appl. Phys. Lett. 50, 95 (1987)Google Scholar
9.Wu, M.F., Vantomme, A., Hogg, S., Pattyn, H. and Langouche, G., Appl. Phys. Lett. 72, 2412 (1998).Google Scholar
10.Brown, I.G., Gavin, J.E., and MacGill, R.A., Appl. Phys. Lett. 47, 1358 (1985).Google Scholar
11.Zhu, D.H., Tao, K., Pan, F. and Liu, B.X., Appl. Phys. Lett. 62, 2356 (1993).Google Scholar
12.Liu, B.X., Zhu, D.H., Lu, H.B., Pan, F. and Tao, K., J. Appl. Phys. 75, 3847 (1994).Google Scholar
13.Zhu, D.H., Chen, Y.G. and Liu, B.X., Nucl. Instr. and Meth. B101, 394 (1995).Google Scholar
14.Gao, K.Y., Liu, B.X., Nucl. Instr. and Meth. B132, 68 (1997).Google Scholar
15.Gao, K.Y., Zhu, H.N., Liu, B.X., Nucl. Instr. and Meth. B140, 126 (1998).Google Scholar