Hostname: page-component-54dcc4c588-r5qjk Total loading time: 0 Render date: 2025-10-14T03:17:22.405Z Has data issue: false hasContentIssue false
  • English
  • Français

Sxes Study of Transition Metal Silicide Films and their Contacts to Semiconductors

Published online by Cambridge University Press:  21 February 2011

H. Watabe ,
M. Iwami ,
M. Hirai ,
M. Kusaka ,
M. Kubota ,
H. Nakamura ,
M. Kawai ,
H. Soezima  and
F. Akao
H. Watabe
Affiliation:
Matsushita Electric Industrial Co., Ltd., Twin 21 National Tower, 2–1–61 Shiromi, Chu-o-ku, Osaka 540, Japan
M. Iwami
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okaya-ma 700, Japan
M. Hirai
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okaya-ma 700, Japan
M. Kusaka
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okaya-ma 700, Japan
M. Kubota
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okaya-ma 700, Japan
H. Nakamura
Affiliation:
Osaka Electro-Communication University, Hatsu, Neyagawa, Osaka 572, Japan
M. Kawai
Affiliation:
Shimazu Corp., 1 Nishinokyo-Kawabaracho, Nakagyou-ku, Kyoto 604, Japan
H. Soezima
Affiliation:
Shimazu Corp., 1 Nishinokyo-Kawabaracho, Nakagyou-ku, Kyoto 604, Japan
F. Akao
Affiliation:
Okayama University of Science, Ridai-cho, Okayama 700, Japan
Get access

Abstract

Spectra obtained by a new soft x-ray emission spectroscopy(SXES) apparatus again exhibited clear differences among Si-compounds and Si crystal. A non-destructive analysis of an annealed transition metal(TMSi:film)/Si(111) contact system was carried out using either the distinct differences of Si L2, 3 SXES spectra between TMSi's and Si single crystals or the fad that the soft x-ray production depth increases in a solid with the energy of the primary electron, Ep. It was shown that the apparatus was capable of exploring electronic and atomic structures of a multi-layered contact system grown on a Si(111) substrate.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 173
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Wiech, G. and Zoepf, E., in: Band Structure Spectroscopy of Metals and alloys, Eds. Fabian, D.J. and Watson, L.M. (Acad. Press, 1973) p.629.Google Scholar
[2] Murarka, S.P., Silicide for VLSI Applications (Academic Press, New York, 1983).Google Scholar
[3] Iwami, M., Hirai, M., Kusaka, M., Kubota, M., Nakamura, H., Watabe, H., Kawai, M. and Soezima, H., Jpn. J. Appl. Phys., 29, 1353 (1990).Google Scholar
[4] Nakamura, H., Iwami, M., Hirai, M., Kusaka, M., Akao, F. and Wa-tabe, H., Phys. Rev. B 41, 12092 (1990).Google Scholar
[5] Yeh, J.J. and Lindau, I., Atomic Data and Nuclear Data Table 32, 1 (1985).Google Scholar
[6] See, for example, Rubloff, G.W., Surf. Sci. 132, 268 (1983).Google Scholar
[7] Okuno, K., Iwami, M., Hiraki, A., Matsumura, M. and Asayama, K., Solid State Commun. 33, 899 (1980).Google Scholar
[8] Speier, W., private communication, to be published.Google Scholar
[9] Martinage, L., Cherief, N., Pasturel, A., Veullen, J.Y., Papaconstatopoulos, D. and Cryot-Lackmann, F., presented in the ICV-11/ICSS-7, Köln, September, 1989.Google Scholar
[10] Iwami, M., Nakamura, H., Hirai, M., Kusaka, M., Azuma, Y. and Akao, F., Jpn. J. Appl. Phys. Letters, 29, 264 (1990).Google Scholar
[11] Iwami, M., Kusaka, M., Hirai, M., Nakamura, H., Shibahara, K. and Matsunaml, H., Surf. Sci. 199, 467 (1988).Google Scholar