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Surface Reaction Mechanisms in Chemical Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

John S. Foord ,
Nagindar K. Singh ,
Andrew T.S. Wee ,
Cathy L. French  and
Emma T. Fitzgerald
John S. Foord*
Affiliation:
University of Oxford, Physical Chemistry Laboratory, South Parks Road, Oxford OXI 3QR
Nagindar K. Singh
Affiliation:
University of Oxford, Physical Chemistry Laboratory, South Parks Road, Oxford OXI 3QR
Cathy L. French
Affiliation:
University of Oxford, Physical Chemistry Laboratory, South Parks Road, Oxford OXI 3QR
Emma T. Fitzgerald
Affiliation:
University of Oxford, Physical Chemistry Laboratory, South Parks Road, Oxford OXI 3QR
*
*To whom correspondence should be addressed
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Abstract

Surface reaction mechanisms which underly the growth of III-V semiconductors by chemical beam epitaxy have been investigated using a combination of surface spectroscopic techniques in conjunction with modulated molecular beam scattering techniques. Emphasis is placed on understanding the complex growth rate effects observed during the growth of Ga(Al,In)As and the origin of selected area epitaxy. These effects are shown to arise from the surface sensitive nature of the decomposition of the group III alkyl source chemicals used in CBE.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 3
Copyright
Copyright © Materials Research Society 1991

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Footnotes

**

current address: National University of Singapore, Department of Physics, Lower Kent Ridge Road, Singapore 0511.

References

REFERENCES

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