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Surface and Near-Surface Atom Dynamics During Low Energy Xe Ion Bombardment of Si and Fcc Surfaces

Published online by Cambridge University Press:  16 February 2011

M. V. R. Murty ,
H. S. Lee  and
Harry A. Atwater
M. V. R. Murty
Affiliation:
Thomas J. Watson Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
H. S. Lee
Affiliation:
Thomas J. Watson Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
Harry A. Atwater
Affiliation:
Thomas J. Watson Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
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Abstract

Surface and near-surface processes have been studied during low energy Xe ion bombardment of Si (001) and fcc surfaces using molecular dynamics simulations. Defect production is enhanced near the surface of smooth Si (001) surfaces with respect to the bulk in the energy range 20–150 eV, but is not confined exclusively to the surface layer. The extent and qualitative nature of bombardment-induced dissociation of small fcc islands on an otherwise smooth fcc (001) surface is found to depend strongly on island cohesive energy.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 193: Symposium Q – Atomic Scale Calculations of Structure in Materials , 1990 , 301
Copyright
Copyright © Materials Research Society 1990

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References

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