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Sub-Nm Screening Layer Approach for Ultra Shallow Junction Formation

Published online by Cambridge University Press:  10 February 2011

M. Hori ,
T. Miyake ,
K. Hikazutani ,
Y. Kataoka ,
M. Nakamura ,
T. Wada  and
M. Kase
M. Hori
Affiliation:
Fujitsu limited, 1500 Mizono, Tado-cho, Kuwana-gun, Mie 511-0192, Japan.
T. Miyake
Affiliation:
Fujitsu limited, 1500 Mizono, Tado-cho, Kuwana-gun, Mie 511-0192, Japan.
K. Hikazutani
Affiliation:
Fujitsu limited, 1500 Mizono, Tado-cho, Kuwana-gun, Mie 511-0192, Japan.
Y. Kataoka
Affiliation:
Fujitsu limited, 1500 Mizono, Tado-cho, Kuwana-gun, Mie 511-0192, Japan.
M. Nakamura
Affiliation:
Fujitsu limited, 1500 Mizono, Tado-cho, Kuwana-gun, Mie 511-0192, Japan.
T. Wada
Affiliation:
Fujitsu limited, 1500 Mizono, Tado-cho, Kuwana-gun, Mie 511-0192, Japan.
M. Kase
Affiliation:
Fujitsu limited, 1500 Mizono, Tado-cho, Kuwana-gun, Mie 511-0192, Japan.
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Abstract

This paper describes the influence of the sub-nm screening and capping oxide layer of wet process on B diffusion for 50 nm shallow junction formation. The reason is proposed that the knock-on oxygen into Si makes B diffusion faster such as in the case of oxidation enhanced diffusion. To suppress the B enhanced diffusion, the screening oxide formed before implant should be thin to reduce the knock-on oxygen. The wet process before annealing strongly influences the B diffusion, in particular, thicker capping oxide with sub-oxide structure and knock-on oxygen has an important rule for the enhanced diffusion.

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References

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