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Sub-Nanometer-Equivalent PZT Thin Films Fabricated by Low-Temperature MOCVD

Published online by Cambridge University Press:  22 February 2011

Hiroshi Miki ,
Yuzuru Ohji  and
Shinichi Tachi
Hiroshi Miki
Affiliation:
ULSI Research Center, Central Research Laboratory, Hitachi Ltd., 1–280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185, Japan.
Yuzuru Ohji
Affiliation:
ULSI Research Center, Central Research Laboratory, Hitachi Ltd., 1–280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185, Japan.
Shinichi Tachi
Affiliation:
ULSI Research Center, Central Research Laboratory, Hitachi Ltd., 1–280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185, Japan.
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Abstract

Ferroelectric PZT (Pb (Zr,Ti)O3) from 100 nm down to 50 nm thick was deposited on Pt/SiO2/Si substrates using MOCVD (Metal Organic Chemical Vapor Deposition) under reduced pressure at 550°C. Using Pb (DPM)2, Zr (DPM)4, and Ti(i–OC3H7)4 as precursors made it possible to control the composition of CVD films and to produce pure perovskite crystalline structure in the range of thickness less than 100 nm. Electrical measurements of the capacitors revealed that 50-nm PZT films typically had a dielectric constant of 500, resulting in the same capacitance as 0.4-nm SiO2.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 535
Copyright
Copyright © Materials Research Society 1993

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References

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