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A Study of the Effect of V/III Flux Ratio and Substrate Temperature on the in Incorporation Efficiency in inx Ga1− x /GaN Heterostructures Grown by Rf Plasma-Assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  03 September 2012

M. L. O'Steen ,
F. Fedler  and
R. J. Hauenstein
M. L. O'Steen
Affiliation:
Dept. of Physics, Oklahoma State University, Stillwater, OK 74078, U.S.A.
R. J. Hauenstein
Affiliation:
Dept. of Physics, Oklahoma State University, Stillwater, OK 74078, U.S.A.
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Abstract

Laterally resolved high resolution X-ray diffraction (HRXRD) and photoluminescence spectroscopy (PL) have been used to assess In incorporation efficiency in Inx Ga1− x N/GaN heterostructures grown through rf-plasma-assisted molecular beam epitaxy. Average alloy composition over a set of Inx Ga1− x N/GaN superlattices has been found to depend systematically upon both substrate temperature (T sub) and V/III flux ratio during growth. A pronounced thermally activated In loss (with more than an order-of-magnitude decrease in average alloy composition) is observed over a narrow temperature range (590–670oC), with V/III flux ratio fixed. Additionally, the V/III flux ratio is observed to further strongly affect In incorporation efficiency for samples grown at high T sub, with up to an order-of-magnitude enhancement in In content despite only a minor increase in V/III flux ratio. PL spectra reveal redshifts as In content is increased and luminescence efficiency which degrades rapidly with decreasing T sub. Results are consistent with In loss arising from thermally activated surface segregation + surface desorption processes during growth.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.27
Copyright
Copyright © Materials Research Society 1999

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