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Study of Modulation in GaAs Misfets with LT-GaAs as a Gate Insulator

Published online by Cambridge University Press:  15 February 2011

L.-W. Yin ,
J. Ibbetson ,
M. M. Hashemi ,
W. Jiang ,
S.-Y. Hu ,
A. C. Gossard  and
U. K. Mishra
L.-W. Yin
Affiliation:
University of California, ECE Department, Santa Barbara, California
J. Ibbetson
Affiliation:
University of California, ECE Department, Santa Barbara, California
M. M. Hashemi
Affiliation:
University of California, ECE Department, Santa Barbara, California
W. Jiang
Affiliation:
University of California, ECE Department, Santa Barbara, California
S.-Y. Hu
Affiliation:
University of California, ECE Department, Santa Barbara, California
A. C. Gossard
Affiliation:
University of California, ECE Department, Santa Barbara, California
U. K. Mishra
Affiliation:
University of California, ECE Department, Santa Barbara, California
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Abstract

DC characteristics of a GaAs MISFET structure using low-temperature GaAs (LTGaAs) as the gate insulator were investigated. MISFETs with different gate to channel separation (d) were fabricated. The dependence of four important device parameters such as gate-drain breakdown voltage (VBR), channel current at zero gate bias (Idss), transconductance (gm), and gate-drain turn-on voltage (Von) on the gate insulator thickness were analyzed. It was observed that (a) in terms of Idss and gin, the LT-GaAs gate insulator behaves like an undoped regular GaAs layer and (b) in terms of VBR and Von, the LT-GaAs gate insulator behaves as a trap dominated layer.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 181
Copyright
Copyright © Materials Research Society 1992

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References

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