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Study of BF2 ion implantation into crystalline silicon : Influence of fluorine on boron diffusion

Published online by Cambridge University Press:  17 March 2011

Lilya Ihaddadene-Lecoq ,
Jerome Marcon  and
Kaouther Ketata
Lilya Ihaddadene-Lecoq
Affiliation:
Laboratory of Electronic Microtechnology and Instrumentation (LEMI) University of ROUEN, 76821 Mont saint Aignan, France
Jerome Marcon
Affiliation:
Laboratory of Electronic Microtechnology and Instrumentation (LEMI) University of ROUEN, 76821 Mont saint Aignan, France
Kaouther Ketata
Affiliation:
Laboratory of Electronic Microtechnology and Instrumentation (LEMI) University of ROUEN, 76821 Mont saint Aignan, France
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Abstract

We have investigated and modeled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF2 +. Low energy BF2 + 1×1015 cm−2 implantations at 2.0keV were characterized using Secondary Ion Mass Spectrometry (SIMS) in order to measure dopant profiles. RTA was carried out at 950°C, 1000°C, 1050°C and 1100°C during 10s, 20s, 30s and 60s. The results show that concentration profiles for BF2 + implant are shallower than those for a direct B+ ion implantation. This could be attributed to the presence of fluorine which trap interstitial Si so that interstitial silicon supersaturation is low near the surface.

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