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A Study of Arsenic Dopant Concentration and Activity as a Function of Growth Conditions in Polycrystalline MOCVD-Grown CdTe

Published online by Cambridge University Press:  01 February 2011

Anne Stafford ,
Stuart J.C. Irvine ,
Ken Durose  and
Guillaume Zoppi
Anne Stafford
Affiliation:
Department of Chemistry, University of Wales, Bangor, Gwynedd, LL57 2AW, U.K.
Stuart J.C. Irvine
Affiliation:
Department of Chemistry, University of Wales, Bangor, Gwynedd, LL57 2AW, U.K.
Ken Durose
Affiliation:
Department of Physics, University of Durham, South Road, Durham, DH1 3LE, U.K.
Guillaume Zoppi
Affiliation:
Department of Physics, University of Durham, South Road, Durham, DH1 3LE, U.K.
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Abstract

P-type CdTe can be produced via acceptor doping with As. However, as with other II/VI materials, the dopant behaviour is not simple, as there is the potential for compensating species to be formed from intrinsic defects and dopant-defect complexes. A further complication is introduced by the presence of grain boundaries in polycrystalline material. This study demonstrates that dopant concentration is a function of VI/II ratio in the growth ambient, and that resistivity is minimised for a dopant concentration of < 2 × 1018 at.cm-3. Grain size is also affected by the VI/II ratio, increasing slightly as the growth ambient becomes more Te-rich.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B1.5
Copyright
Copyright © Materials Research Society 2003

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