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Structure of Au/Ge/Au Multilayer Ohmic contacts to GaAs

Published online by Cambridge University Press:  22 February 2011

Tae-Il Kim  and
D. D. L. Chung
Tae-Il Kim
Affiliation:
Department of Metallurgical Engineering and Materials Science Carnegie-Mellon University, Pittsburgh, Pennsylvania 15213
D. D. L. Chung
Affiliation:
Department of Metallurgical Engineering and Materials Science Carnegie-Mellon University, Pittsburgh, Pennsylvania 15213
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Abstract

The presence of a 500 Å Ge layer in Au/Ge/Au ohmic contacts to GaAs was found to hinder the agglomeration of Au upon heating. An ohmic contact as uniform as the asdeposited metallization was achieved after heating at 300°C. Heating at 350–500°C resulted in various morphological entities in a Au-rich matrix. The microstructure changed from one with a Au-rich matrix to one with a GaAs-rich matrix and dendritic Au-rich islands at 525±25°C. Heating at 400°C or above resulted in Au-Ga phases with the epitaxial relationships α' (110) ‖ GaAs (100) and Au2Ga (112) ‖ GaAs (100).

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 69
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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