Hostname: page-component-54dcc4c588-5q6g5 Total loading time: 0 Render date: 2025-10-06T14:12:26.898Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure and Morphology Characters of GaN Grown by ECR-MBE Using Hydrogen-Nitrogen Mixed Gas Plasma

Published online by Cambridge University Press:  03 September 2012

Tsutomu Araki ,
Yasuo Chiba  and
Yasushi Nanishi
Tsutomu Araki
Affiliation:
Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan
Yasuo Chiba
Affiliation:
Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan
Yasushi Nanishi
Affiliation:
Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan
Get access

Abstract

GaN growth by electron-cyclotron-resonance plasma-excited molecular beam epitaxy using hydrogen-nitrogen mixed gas plasma were carried out on GaN templates with a different polar-surface. Structure and surface morphology of the GaN layers were characterized using transmission electron microscopy. The GaN layer grown with hydrogen on N-polar template showed a relatively flat morphology including hillocks. Columnar domain existed in the center of the hillock, which might be attributed to the existence of tiny inversion domain with Ga-polarity. On the other hand, columnarstructure was formed in the GaN layer grown with hydrogen on Ga-polar template.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.37
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Fujita, N., Yoshizawa, M., Kushi, K., Sasamoto, H., Kikuchi, A. and Kishino, K., J.Cryst.Growth, 189/190, 385 (1998).Google Scholar
2. Yang, Z., Li, L.K. and Wang, W.I., Appl.Phys.Lett., 67, 1686 (1995).Google Scholar
3. Grandjean, N., Leroux, M., Laugt, M. and Massies, J., Appl.Phys.Lett., 71, 240 (1997).Google Scholar
4. Yu, Zhonghai, Buczkowsk, S.L., Giles, N.C., Myers, T.H. and Richards-babb, M.R., Appl.Phys.Lett., 69, 2731 (1996).Google Scholar
5. Chiba, Y., Tominari, T., Nobata, M. and Nanishi, Y., Inst.Phys.Conf.Ser., 162, 651 (1998) 651.Google Scholar
6. Araki, T., Chiba, Y., Nobata, M., Nishioka, Y. and Nanishi, Y., J.Cryst.Growth, (1999) (to be published).Google Scholar
7. Araki, T., Chiba, Y. and Nanishi, Y., J.Cryst.Growth, (1999) (to be published).Google Scholar
8. Smith, A.R., Feenstra, R.M., Greve, D.W., Shin, M.-S., Skowronski, M., Neugebauer, J. and Northrup, J.E., Appl.Phys.Lett. 72, 2114 (1998).Google Scholar
9. Smith, A.R., Feenstra, R.M., Greve, D.W., Shin, M.-S., Skowronski, M., Neugebauer, J. and Northrup, J.E., J.Vac.Sci.Technol. B 16, 2242 (1998).Google Scholar
10. Rouviere, J.L., Arlery, M., Niebuhr, R., Bachem, K.H. and Briot, O., MRS Internet J. Nitride Semicond. Res. 1, 33 (1996).Google Scholar