Hostname: page-component-84c44f86f4-nmpfk Total loading time: 0 Render date: 2025-10-14T21:46:56.139Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure and Electronic Parameters of A-Si:H Deposited by DC-MASD

Published online by Cambridge University Press:  15 February 2011

O. A. Golikova ,
A. N. Kuznetsov ,
V. Kh. Kudoyarova ,
M. M. Kazanin ,
G. J. Adriaenssens  and
H. Herremans
O. A. Golikova
Affiliation:
A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia.
A. N. Kuznetsov
Affiliation:
A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia.
V. Kh. Kudoyarova
Affiliation:
A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia.
M. M. Kazanin
Affiliation:
A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia.
G. J. Adriaenssens
Affiliation:
K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium.
H. Herremans
Affiliation:
K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium.
Get access

Abstract

A systematic study of structure and electronic parameters of a-Si:H deposited by dc-magnetron assisted SiH4 decomposition (MASD) depending on substrate temperature, gas pressure, gas flow and grid mounting has been carried out. Correlation between the film microstructure, dangling bond density and electron mobility-life time product were established. The photoconductivity changes under light soaking were shown to be minimal when the films contained hydrogen in the (SiH2)n chains.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 519
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Golikova, O.A., Kuznetsov, A.N., Kh, V.. Kudoyarova, , Kazanin, M.M., Semiconductors 30, 1879 (1996).Google Scholar
2. Gangluly, G. and Matsuda, A., Phys. Rev. B47, 3661 (1993).Google Scholar
3. Meaudre, R., Meaudre, M., Vignoli, S., Roca i Cabarrocas, P., Bouizem, Y., Theye, M.L., Phil. Mag. B, 67, 497 (1993).Google Scholar
4. Golikova, O.A., Kazanin, M.M., Konkov, O.I., Kudoyarova, V. Kh., Terukov, E.I., Semiconductors 30, 226 (1996).Google Scholar
5. Madan, A.H., Capella, J., Nelson, B.P., Crandall, R.S., J. Appl. Phys. 69, 6728 (1991).Google Scholar
6. Kroll, U., Meier, J., Goetz, M., Howling, A., Dorier, J.-L., Dutla, J., Shan, A., Hollenstein, Ch., J. of Non-Cryst. Sol. 59, 164–166 (1993).Google Scholar
7. Johnson, N.M., Santos, P.V., Nebel, C.E., Jackson, W.B., Street, R.A., Stevens, K.V., Walker, J., J. of Non-Cryst. Sol. 137/138, 235 (1991).Google Scholar
8. Caputo, D., de Cesare, G., Irrera, F., Palma, F., Rossi, M.C.. Conte, G., Nolile, G., Fameli, G., J. of Non-Cryst. Sol. 170, 278 (1994).Google Scholar
9. Beldi, N., Sib, J., Chahed, L., Smail, T., Mohammed-Brahim, T., Djebour, Z., Kleider, J.P., Longeaud, C., Mencaraglia, D., J. Non-Ciyst. Sol. 164–166, 309 (1993).Google Scholar
10. Vardeny, Z., Zhou, T.X. and Taue, J., Amorphous Silicon and Related Materials, ed. Fritzsche, H.(World Scientific, Singapore, 1989), p. 513.Google Scholar
11. O'Connor, P. and Taue, J., Phys. Rev. B25, 2748 (1982).Google Scholar
12. Tauc, J. and Vardeny, Z., Phil. Mag. B52, 313 (1985).Google Scholar
13. Stoddart, H.A., Vardeny, Z. and Taue, J., Phys. Rev. B38, 1362 (1988).Google Scholar
14. Grevendonk, W., Verluyten, M., Dauwen, J., Adriaenssens, G.J. and Bezemer, J., Phil. Mag. B61. 393 (1990).Google Scholar
15. Dauven, J. and Grevendonk, W., J. of Non-Cryst. Sol. 114, 295 (1989).Google Scholar