Hostname: page-component-54dcc4c588-42vt5 Total loading time: 0 Render date: 2025-10-07T06:43:06.118Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure and Dissociation of 15° <110> Tilt Boundaries in Germanium

Published online by Cambridge University Press:  22 February 2011

W. Skrotzki ,
H. Wendt ,
C. B. Carter  and
D. L. Kohlstedt
W. Skrotzki
Affiliation:
Department of Materials Science and Engineering, Cornell University,Ithaca, NY 14853, USA
H. Wendt
Affiliation:
Department of Materials Science and Engineering, Cornell University,Ithaca, NY 14853, USA
C. B. Carter
Affiliation:
Department of Materials Science and Engineering, Cornell University,Ithaca, NY 14853, USA
D. L. Kohlstedt
Affiliation:
Department of Materials Science and Engineering, Cornell University,Ithaca, NY 14853, USA
Get access

Abstract

The structure and dissociation of grain boundaries in Ge bicrystals, grown by the Czochralski method, have been analyzed by visible light and transmission electron microscopy. The seed crystals were oriented to yield either a symmetric or an asymmetric grain boundary plane with a 15° rotation about a common <110> direction. The asymmetric boundary, with a {111} boundary plane, dissociated along most of its length into a first order twin boundary (Σ 3) and a symmetric 55° grain boundary (Σ 41c). The symmetric 15° boundary is composed of an array of Lomer dislocations. Contrary to theoretical predictions, this boundary is stable.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 299
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Johnston, W. G. in: Progress in Ceram. Sci. 2, 46 (1962).Google Scholar
2. Bourret, A. and Desseaux, J., Phil. Mag. 39, 405 (1979).Google Scholar
3. Cunningham, B., 40th Ann. Proc. Electron Microscopy Soc. Amer., 434 (1982).CrossRefGoogle Scholar
4. Carter, C. B., Rose, J., and Ast, D. G., Inst. Phys. Conf. Ser. 60, 153 (1981).Google Scholar
5. Cunningham, B. and Ast, D. G., 41st Ann. Proc. Electron Microscopy Soc. Amer., 114 (1983).Google Scholar
6. Carter, C. B. in: Grain Boundaries in Semiconductors (North Holland), 33 (1982).Google Scholar
7. Bourret, A. and Desseaux, J., Phil. Mag. A39, 419 (1979).Google Scholar
8. Cunningham, B. and Ast, D. G. in: Grain Boundaries in Semiconductors (North Holland), 21 (1982).Google Scholar
9. Cunningham, B., Strunk, H. P., and Ast, D. G., Scripta Met. 16, 349 (1982).Google Scholar
10. Vaudin, M. D., Cunningham, B., and Ast, D. G., Scripta Met. 17, 191 (1983).Google Scholar
11. Hornstra, J., Physica 25, 409 (1959).Google Scholar