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Structure and Carrier-Transport in a-Si:H, a-Si(Ge): H Films Prepared by Chemical Annealing

Published online by Cambridge University Press:  21 February 2011

Hajime Shirai ,
Kenjiro Nakamura ,
Masanobu Azuma ,
Jun-ichi Hanna  and
Isamu Shimizu
Hajime Shirai
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori- ku Yokohama-city Japan, 227
Kenjiro Nakamura
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori- ku Yokohama-city Japan, 227
Masanobu Azuma
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori- ku Yokohama-city Japan, 227
Jun-ichi Hanna
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori- ku Yokohama-city Japan, 227
Isamu Shimizu
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori- ku Yokohama-city Japan, 227
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Abstract

The stability and opto-electric properties of a-Si:H films fabricated by “chemical annealing (CA)” with excited states of He (He*) were systematically investigated. The films made by the CA mode showed a high photoconductivity due to a low level of defect density, 2×1015cm-3, and improvement in the stability against light soaking. A marked improvement was also found in the hole-transport in films fabricated by the CA. The structural relaxation on the growing surface was also enhanced by addition of a small amount of Ge.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 511
Copyright
Copyright © Materials Research Society 1992

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References

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