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Structural Properties of Dielectric Layers Following CO2 Laser Irradiation of SOI Structures

Published online by Cambridge University Press:  21 February 2011

H. Baumgart ,
E. Arnold ,
J. Petruzzello ,
T. F. McGee  and
M. H. Frommer
H. Baumgart
Affiliation:
Philips Laboratories, Briarcliff Manor, New York 10510
E. Arnold
Affiliation:
Philips Laboratories, Briarcliff Manor, New York 10510
J. Petruzzello
Affiliation:
Philips Laboratories, Briarcliff Manor, New York 10510
T. F. McGee
Affiliation:
Philips Laboratories, Briarcliff Manor, New York 10510
M. H. Frommer
Affiliation:
Philips Laboratories, Briarcliff Manor, New York 10510
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Abstract

Semi-insulating polycrystalline silicon films have been used as matching layers in micro-zone-melting recrystallization experiments of silicon-on-insulator (SOI) structures. The effect of the laser irradiation on the structural composition and crystallographic properties has been investigated by transmission electron microscopy and Auger electron spectroscopy. CO2 laser processing has been shown to lead to redistribution of oxygen and interface segregation of thin oxide and silicon zones.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 87
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Hawkins, W.G., Black, J.G. and Griffiths, C.H., Appl. Phys. Lett. 40 (4) 319 (1982).CrossRefGoogle Scholar
2. Baumgart, H. and Arnold, E., to be published.Google Scholar
3. Kern, W., Puotinen, D.A., RCA Review, 187 (1970).Google Scholar
4. Hitchman, M.L. and Kane, J., J. Cryst. Growth (55) 485 (1981).Google Scholar
5. Hitchman, M.L. and Widmer, A.E., J. Cryst. Growth (55) 501 (1981).CrossRefGoogle Scholar
6. Maxwell, H.R. and Knolle, W.R., J. Electrochem. Soc., Vol.128, No. 3, 576 (1981).Google Scholar
7. Hamasaki, M., Adachi, T., Wakayama, S. and Kikuchi, M., J. Appl. Phys. 49 (7) 3987 (1978).10.1063/1.325356CrossRefGoogle Scholar
8. Hartstein, A., Tsang, J.C., DiMaria, D.J. and Dong, D.W., Appl. Phys. Lett. 36 (10) 836 (1980).Google Scholar
9. Adachi, T. and Helms, C.R., J. Electrochem. Soc., Vol.127, No. 7, 1617 (1980).Google Scholar