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Structural, Optical and Electrical Properties of μc-SiC:H Thin Films Deposited by the VHF-GD

Published online by Cambridge University Press:  28 February 2011

Roger Fluckiger ,
J. Meier ,
A. Shah ,
J. Pohl ,
M. Tzolov  and
R. Carius
Roger Fluckiger
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Suisse
J. Meier
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Suisse
A. Shah
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Suisse
J. Pohl
Affiliation:
Universität Konstanz, Postfach 5560/X916, D-78434 Konstanz, Germany
M. Tzolov
Affiliation:
ISI-PV, Forschungszentrum Jülich, P.O. Box 1913, D-52425 Jülich, Germany
R. Carius
Affiliation:
ISI-PV, Forschungszentrum Jülich, P.O. Box 1913, D-52425 Jülich, Germany
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Abstract

In the present paper the authors present new results on thin (μc-SiC:H films deposited at low temperatures by the Very High Frequency - Glow Discharge technique (VHF-GD) at 70 MHz. The individual effects of each of the deposition parameters (methane and diborane gas phase ratios, input power, deposition temperature and pressure) are investigated with respect to the structural, optical and electrical properties of the films; the goal being the growth of optimised, thin μc-SiC:H layers for use as highly conductive and high gap window layers in solar cells.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 793
Copyright
Copyright © Materials Research Society 1995

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References

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