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Stress Stability of Poly-SiGe and Various Oxide Films in Humid Environments

Published online by Cambridge University Press:  01 February 2011

Carrie W. Low ,
Brian L. Bircumshaw ,
Tatiana Dorofeeva ,
Gelila Solomon ,
Tsu-Jae King  and
Roger T. Howe
Carrie W. Low
Affiliation:
Departments of Electrical Engineering and Computer Sciences, University of California at Berkeley, 497. Cory Hall, Berkeley, CA 94720–1774, USA
Brian L. Bircumshaw
Affiliation:
Mechanical Engineering, University of California at Berkeley, 497. Cory Hall, Berkeley, CA 94720–1774, USA
Tatiana Dorofeeva
Affiliation:
Departments of Electrical Engineering and Computer Sciences, University of California at Berkeley, 497. Cory Hall, Berkeley, CA 94720–1774, USA
Gelila Solomon
Affiliation:
Departments of Electrical Engineering and Computer Sciences, University of California at Berkeley, 497. Cory Hall, Berkeley, CA 94720–1774, USA
Tsu-Jae King
Affiliation:
Departments of Electrical Engineering and Computer Sciences, University of California at Berkeley, 497. Cory Hall, Berkeley, CA 94720–1774, USA
Roger T. Howe
Affiliation:
Departments of Electrical Engineering and Computer Sciences, University of California at Berkeley, 497. Cory Hall, Berkeley, CA 94720–1774, USA Mechanical Engineering, University of California at Berkeley, 497. Cory Hall, Berkeley, CA 94720–1774, USA
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Abstract

This paper presents the stress stability of thin films for MEMS structural and sacrificial layers. The average residual stresses of the thin films were monitored via wafer curvature measurement over a long period of time. Poly-Si, poly-SiGe, poly-Ge and thermally growth SiO2 films are found to be stable in humid environments. Moisture makes LPCVD and TEOS-based PECVD SiO2 films more compressive over time. Multi-layer thin film stress is modeled with the same methodology used to derive the Stoney Equation [1].

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 854: Symposium U – Stability of Thin Films and Nanostructures , 2004 , U3.3
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

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