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Stress Mapping Near Simulated Defects in Thin Film Wiring Using X-ray Microbeam Diffraction

Published online by Cambridge University Press:  15 February 2011

Patrick Dehaven  and
Charles Goldsmith
Patrick Dehaven
Affiliation:
IBM Analytical Services, Hopewell Junction, NY; and Sundar Kamath, IBM Technology Products, Hopewell Junction, NY.
Charles Goldsmith
Affiliation:
IBM Analytical Services, Hopewell Junction, NY; and Sundar Kamath, IBM Technology Products, Hopewell Junction, NY.
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Abstract

The stress distribution about a series of deliberately fabricated defects in a Cu/Ni/Au/Cr redundant metal stack deposited on a Cr/Cu/Cr serpentine has been studied via x-ray microbeam diffraction using the sin2 ψ technique. Strong directional anisotropies in the stress were found for both the second level nickel and copper. The extent of nickel stress relaxation from the edge of a defect far exceeded that predicted by a simple metal on substrate model. The size of the defect did not appear to significantly influence the stress distribution in the second level metal; however, the data suggest that the linewidth may influence the magnitude of the stress along the length of a line when near a defect or other sharp discontinuity.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 343
Copyright
Copyright © Materials Research Society 1993

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References

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