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Strain and Damage Measurements in Ion Implanted AlxGa1−x As/GaAs Superlattices

Published online by Cambridge University Press:  26 February 2011

A. H. Hamdi ,
J. L. Tandon ,
T. Vreeland Jr  and
M.-A. Nicolet
A. H. Hamdi
Affiliation:
California Institute of Technology, Pasadena, CA 91125
J. L. Tandon
Affiliation:
Applied Solar Energy Corporation, City of Industry, CA 91744
T. Vreeland Jr
Affiliation:
California Institute of Technology, Pasadena, CA 91125
M.-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125
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Abstract

Strain measurements in AlxGa1−x As/GaAs superlattices have been carried out before and after Si ion implantation. For doses up to 5 × 1015 cm−2, no atomic intermixing of the sublayers is observed by backscattering spectrometry. However, with x-ray rocking curve measurements, significant changes in the strain profiles are detected for implantations with doses as low as 7 × 1012 cm−2. Interpretation of the rocking curves suggests that low-dose implantations release strain in the AlxGa1−x As sublayers. The strain profile recovery of the implanted samples, upon annealing at ∼ 420°C, implies that the damage caused by implantation is largely reversible.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 319
Copyright
Copyright © Materials Research Society 1985

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