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Stable Visible Photoluminescence from Annealed Polysiloxene-Based Thin Films

Published online by Cambridge University Press:  10 February 2011

S. Miyazaki ,
A. Mouraguchi  and
M. Shinohara
S. Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan, miyazaki@sxsys.hiroshima-u.ac.jp
A. Mouraguchi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan, miyazaki@sxsys.hiroshima-u.ac.jp
M. Shinohara
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan, miyazaki@sxsys.hiroshima-u.ac.jp
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Abstract

Polysiloxene-based films have been prepared by plasma enhanced CVD in a Si2H6+O2 gas mixture at a substrate temperature of −110°C and annealed at temperatures from 700°C to 1000°C. It is found that the film annealed at 1000°C is composed of 1∼5nm Si crystallites embedded in SiO2 and exhibits stable, intense visible-luminescence at room temperature under 488nm excitation. The temperature and excitation power dependences of the steady-state and timeresolved luminescence of the annealed films suggest the radiative recombination through localized states in the Si/SiO2 interface region.

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