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Stability of Nanometer-Size Si Crystals in Amorphous Si Thin Films under Ion Irradiation

Published online by Cambridge University Press:  21 February 2011

Chih M. Yang  and
Harry A. Atwater
Chih M. Yang
Affiliation:
California Institute of Technology, Thomas J. Watson Laboratory of Applied Physics, Pasadena, CA 91125
Harry A. Atwater
Affiliation:
California Institute of Technology, Thomas J. Watson Laboratory of Applied Physics, Pasadena, CA 91125
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Abstract

In this paper we discuss the size-dependent shrinkage rate of nanometer-size Si crystals in amorphous Si thin films during ion irradiation. We obtain shrinkage rate of nanometersize crystals at low temperature under ion irradiation by studying the evolution of the crystal size distribution using transmission electron microscopy. Our results indicate that crystals less than 10 nm in diameter decrease in size faster than larger crystals under ion irradiation. In addition, we fit our data to a capillary model for growth of Si crystals in amorphous Si under ion irradiation.

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References

REFERENCES

1. Im, J. and Atwater, H., Appl. Phys. Lett. 57, 22 (1990).Google Scholar
2. Spinella, C., Battaglia, A., Priolo, F., and Campisano, S., Europhys. Lett. 16, 313 (1991).Google Scholar
3. Spinella, C. and Lombardo, S., Phy. Rev. Lett. 66, 1102 (1991).Google Scholar
4. Oyoshi, K., Yamaoka, T., Tagami, T., and Arima, Y., J. Appl. Phys. 71, 15 (1992).CrossRefGoogle Scholar
5. Atwater, H. and Brown, W., Appl. Phys. Lett. 56, 1 (1990).CrossRefGoogle Scholar
6. Jackson, K., J. Mater. Res. 3, 1218 (1988).Google Scholar