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Stability, diffusion, and complex formation of beryllium in wurtzite GaN

Published online by Cambridge University Press:  17 March 2011

Sukit Limpijumnong ,
Chris G. Van de Walle  and
Jörg Neugebauer
Sukit Limpijumnong
Affiliation:
Xerox PARC, Palo Alto, CA 94304, U.S.A
Chris G. Van de Walle
Affiliation:
Xerox PARC, Palo Alto, CA 94304, U.S.A
Jörg Neugebauer
Affiliation:
Fritz-Haber-Institut, Berlin, Germany
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Abstract

We have studied the properties of Be dopants in GaN using first principles calculations. Substitutional Be on a Ga site acts as an acceptor, but interstitial Be poses a potential problem because of its low formation energy and donor character. We study the diffusion of interstitial Be and find it to be highly anisotropic. We also study the formation of complexes between substitutional and interstitial Be, and between substitutional Be and hydrogen. We have calculated the Be-H vibrational modes to aid in experimental identification of such complexes.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G4.3
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Bour, D. P., Chung, H. F., Götz, W., Romano, L., Krusor, B. S., Hofstetter, D., Rudaz, S., Kuo, C. P., Ponce, F. A., Johnson, N. M., Craford, M. G., and Bringans, R. D., Mater. Res. Soc. Symp. Proc. 449, 509 (1997).Google Scholar
2. Götz, W., Kern, R. S., Chen, C. H., Liu, H., Steigerwald, D. A., and Fletcher, R. M., Mater. Sci. Engin. B 59, 211 (1999).Google Scholar
3. Bernardini, F., Fiorentini, V., and Bosin, A., Appl. Phys. Lett. 70, 2990 (1997).Google Scholar
4. Neugebauer, J. and Walle, C. G. Van de, J. Appl. Phys. 85, 3003 (1999).Google Scholar
5. Walle, C. G. Van de, Limpijumnong, S., and Neugebauer, J., “First-principles studies of beryllium doping of GaN”, submitted to Phys. Rev. B.Google Scholar
6. Neugebauer, J. and Walle, C. G. Van de, Phys. Rev. Lett. 75, 4452 (1995).Google Scholar
7. Götz, W., Johnson, N. M., Bour, D. P., McCluskey, M. D., and Haller, E. E., Appl. Phys. Lett. 69, 3725 (1996).Google Scholar
8. Goldstein, H., Classical Mechanics (Addison-Wesley, Philippines, 1980).Google Scholar
9. Walle, C. G. Van de, Phys. Rev. Lett. 80, 2177 (1998).Google Scholar
10. Johnson, B. G., Gill, P. M. W., and Pople, J. A., J. Chem. Phys. 98, 5612 (1993).Google Scholar