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Spin-Dependent Transport in Manganite Trilayer Junctions

Published online by Cambridge University Press:  10 February 2011

Jonathan Z. Sun
Jonathan Z. Sun*
Affiliation:
IBM T. J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598, jonsun@watson.ibm.comn
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Abstract

Doped manganite trilayer junction provides a model system for the study of spin-dependent transport across an artificial interface between manganites. Large interface magnetoresistance is observed in manganite trilayer junctions. Further studies reveal a strongly temperature and junction-bias dependent magnetoresistance, as well as a large interaction between the spin-polarized current and the ferromagnetic moment. The physical and materials origin of these and other junction properties are discussed in this brief review.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 574: Symposia BB – Multicomponent Oxide Films for Electronics , 1999 , 273
Copyright
Copyright © Materials Research Society 1999

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References

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