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Source / drain contacts in organic polymer thin film transistors

Published online by Cambridge University Press:  15 February 2011

Sandrine Martin ,
Michael C. Hamilton  and
Jerzy Kanicki
Sandrine Martin
Affiliation:
The University of Michigan, Department of Electrical Engineering and Computer Science, Solid-State Electronics Laboratory, 1067 BIRB, 2360 Bonisteel Blvd, Ann Arbor, MI 48109-2108, USA.
Michael C. Hamilton
Affiliation:
The University of Michigan, Department of Electrical Engineering and Computer Science, Solid-State Electronics Laboratory, 1067 BIRB, 2360 Bonisteel Blvd, Ann Arbor, MI 48109-2108, USA.
Jerzy Kanicki
Affiliation:
The University of Michigan, Department of Electrical Engineering and Computer Science, Solid-State Electronics Laboratory, 1067 BIRB, 2360 Bonisteel Blvd, Ann Arbor, MI 48109-2108, USA.
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Abstract

Organic polymer based thin-film transistors (OP-TFTs) look very promising for flexible organic electronics. In this paper, we describe devices based on a gate-planarized structure and using spin-coated organic polymer. We have analyzed the role of the device source and drain contacts and we present data indicating Schottky behavior of the contacts in OP-TFTs. In addition, we describe a quantitative evaluation of the source drain series resistances and extract the OP-TFT intrinsic electrical parameters.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 771: Symposium L – Organic and Polymeric Materials and Devices , 2003 , L6.2
Copyright
Copyright © Materials Research Society 2003

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