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Some Considerations of MOCVD for the Preparation of High Tc Thin Films

Published online by Cambridge University Press:  15 February 2011

Michael L. Hitchman ,
Sarkis H. Shamlian ,
Douglas D. Gilliland ,
David J. Cole-Hamilton ,
Simon C. Thompson ,
Stephen L. Cook  and
Barbara C. Richards
Michael L. Hitchman
Affiliation:
Department of Pure and Applied Chemistry, University of Strathclyde, Glasgow GB-G1 1XL
Sarkis H. Shamlian
Affiliation:
Department of Pure and Applied Chemistry, University of Strathclyde, Glasgow GB-G1 1XL
Douglas D. Gilliland
Affiliation:
Department of Pure and Applied Chemistry, University of Strathclyde, Glasgow GB-G1 1XL
David J. Cole-Hamilton
Affiliation:
Chemistry Department, University of St. Andrews, St. Andrews GB-KY 16 9ST
Simon C. Thompson
Affiliation:
Chemistry Department, University of St. Andrews, St. Andrews GB-KY 16 9ST
Stephen L. Cook
Affiliation:
The Associated Octel Co. Ltd., PO Box 17, Ellesmere Port, South Wirral, GB-L65 4HF
Barbara C. Richards
Affiliation:
The Associated Octel Co. Ltd., PO Box 17, Ellesmere Port, South Wirral, GB-L65 4HF
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Abstract

In this paper we first give a brief overview of the MOCVD of high temperature superconductors and consider the general requirements of a precursor. We then present results for deposition from Y containing precursors and compare apparent enthalpies of sublimation and deposition activation energies with values in the literature. The problem of Ba containing precursors are briefly reviewed and results given for the sublimation of and deposition from a new stable and volatile precursor. Finally, some comments are made about possible deposition mechanisms.

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