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Si-On-Insulator Formation Using a Line-Source ElectronBeam

Published online by Cambridge University Press:  25 February 2011

J.A. Knapp
J.A. Knapp*
Affiliation:
Sandia National Laboratories, Albuquerque, NM87185, USA
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Abstract

A line-source electron beam has been used to melt and recrystallize isolatedSi layers to form Si-on-Insulator structures, and the processis simulated byheat flow calculations. Using sample sweep speeds of 100-600 cm/s and peakpower densities up to 75 kW/cm2 in the 1 × 20 mm beam, we haveobtained single-crystal areas as large as 50 × 350 μIm. Seed openings to thesubstrate are used to control the orientation of the regrowth and the heatflow in the recrystallizing film. A finite-element heat flow code has beendeveloped which correctly simulates the experimental results and whichallows the calculation of untried sample configurations.

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References

REFERENCES

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