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Single Shockley Faults Evolution Under UV Optical Pumping

Published online by Cambridge University Press:  01 February 2011

Andrea Canino ,
Massimo Camarda ,
Antonino La Magna  and
Francesco La Via
Andrea Canino
Affiliation:
andrea.canino.ct@gmail.com, CNR-IMM, IMM, Catania, Italy
Massimo Camarda
Affiliation:
massimo.camarda@imm.cnr.it, CNR-IMM, IMM, Catania, Italy
Antonino La Magna
Affiliation:
antonino.lamagna@imm.cnr.it, CNR-IMM, IMM, Catania, Italy
Francesco La Via
Affiliation:
francesco.lavia@imm.cnr.it, CNR-IMM, IMM, Catania, Italy
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Abstract

Single Shockley faults (SSF) have been studied in 4H-SiC epitaxial layers by using a spatial resolved micro-photoluminescence technique. In particular the effect of the UV pumping laser has been investigated. Samples have been irradiated at different power densities in order to find a threshold for the growth of the SSF defects. A low power density (115 W/cm2) exposition at 325 nm does not affect the structural properties of the epitaxial layers. We observed a growth of this defect through the epitaxial layers when the power density is increased over the value of 115 W/cm2.

Keywords

defectsopticalcrystal growth

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B03-06
Copyright
Copyright © Materials Research Society 2010

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