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Silicon Germanium Oxide (SixGeyO1-x-y) Infrared Sensitive Material for Uncooled Detectors

Published online by Cambridge University Press:  01 February 2011

Reza Anvari ,
Qi Cheng ,
Muhammad Lutful Hai ,
Truc Phan Bui ,
A. J. Syllaios ,
S. K. Ajmera  and
Mahmoud F. Almasri
Reza Anvari
Affiliation:
razn2@mail.mizzou.edu, Uinversity of Missouri, Columbia, Electrical and Computer Engineering, Columbia, Missouri, United States
Qi Cheng
Affiliation:
qi.cheng@mail.mizzou.edu, Uinversity of Missouri, Columbia, Electrical and Computer Engineering, Columbia, Missouri, United States
Muhammad Lutful Hai
Affiliation:
mlhqt5@mail.mizzou.edu, Uinversity of Missouri, Columbia, Electrical and Computer Engineering, Columbia, Missouri, United States
Truc Phan Bui
Affiliation:
tpbrz9@mail.mizzou.edu, Uinversity of Missouri, Columbia, Electrical and Computer Engineering, Columbia, Missouri, United States
A. J. Syllaios
Affiliation:
aj.syllaios@L-3com.com, L-3 Communications, Strategic Development, 13532 N. Central Expressway, Dallas, Texas, 75243, United States, 972-528-1441, 972-528-1422
S. K. Ajmera
Affiliation:
Sameer.Ajmera@L-3com.com, L-3 Communications Infrared Products, Dallas, Texas, United States
Mahmoud F. Almasri
Affiliation:
almasrim@missouri.edu
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Abstract

This paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.

Keywords

amorphousSiGe

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