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SiC Crystal Growth from the Vapor and Liquid Phase

Published online by Cambridge University Press:  21 March 2011

Dieter Hofmann ,
Matthias Bickermann ,
Dirk Ebling ,
Boris Epelbaum ,
Lev Kadinski ,
Markus Selder ,
Thomas Straubinger ,
Roland Weingaertner ,
Peter Wellmann  and
Albrecht Winnacker
Dieter Hofmann
Affiliation:
Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, D-91058 Erlangen, Germany
Matthias Bickermann
Affiliation:
Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, D-91058 Erlangen, Germany
Dirk Ebling
Affiliation:
Freiburg Materials Research Center (FMF), University of Freiburg, Stefan-Meier-Str. 21, D-79104 Freiburg i. Br., Germany
Boris Epelbaum
Affiliation:
Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, D-91058 Erlangen, Germany
Lev Kadinski
Affiliation:
Institute of Fluid Mechanics, University of Erlangen-Nuernberg, Cauerstr. 4, D-91058 Erlangen, Germany
Markus Selder
Affiliation:
Institute of Fluid Mechanics, University of Erlangen-Nuernberg, Cauerstr. 4, D-91058 Erlangen, Germany
Thomas Straubinger
Affiliation:
Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, D-91058 Erlangen, Germany
Roland Weingaertner
Affiliation:
Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, D-91058 Erlangen, Germany
Peter Wellmann
Affiliation:
Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, D-91058 Erlangen, Germany
Albrecht Winnacker
Affiliation:
Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, D-91058 Erlangen, Germany
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Abstract

The status of SiC vapor growth technique (PVT) is reviewed and related innovative aspects are introduced. Problems of the preparation of SiC crystals with uniform electronic properties are addressed, especially the growth of semiinsulating SiC. An overview about the performance of numerical modeling is given as tool for the optimization of the PVT process. Development activities in the field of liquid phase processing for the preparation of SiC bulk crystals and micropipe healing are presented. Finally recent results on the present understanding of filamentary void formation/elimination (micropipes, macrodefects) are summarized.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H1.1
Copyright
Copyright © Materials Research Society 2001

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References

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