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Short-Time Hydrogen Passivation of Poly-Si CMOS Thin film Transistors by High Dose Rate Plasma Ion Implantation

Published online by Cambridge University Press:  21 February 2011

Shu Qin ,
James D. Bernstein ,
Yuanzhong Zhou ,
Wei Liu ,
Chung Chan  and
Tsu-Jae King
Shu Qin
Affiliation:
Plasma Science and Microelectronics Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115, shuqin@neu.edu
James D. Bernstein
Affiliation:
Plasma Science and Microelectronics Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115, shuqin@neu.edu
Yuanzhong Zhou
Affiliation:
Plasma Science and Microelectronics Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115, shuqin@neu.edu
Wei Liu
Affiliation:
Plasma Science and Microelectronics Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115, shuqin@neu.edu
Chung Chan
Affiliation:
Eaton Corp., Semiconductor Equipment Division, 108 Cherry Hill Drive, Beverly, MA 01915
Tsu-Jae King
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

Plasma ion implantation (PII) hydrogenation has been developed for defect passivation in polycrystalline silicon (poly-Si) thin film transistors (TFTs). A high dose rate PII process using a microwave multipolar bucket (MMB) plasma source and a 12.5 kHz pulse generator achieves saturation of device parameter improvement in 5 minutes, which is much shorter than other hydrogenation methods investigated thus far. These results have been achieved in one sixth the implant time of our previous PII experiments and are in good agreement with our process simulation.

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