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Semiconductor Superlattices: Order and Disorder

Published online by Cambridge University Press:  25 February 2011

R. Hull ,
J. E. Turner ,
A. Fischer-Colbrie ,
Alice E. Whitea ,
K. T. Short ,
S. J. Pearton  and
C. W. Tu
R. Hull
Affiliation:
Now at AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. E. Turner
Affiliation:
Hewlett Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304
A. Fischer-Colbrie
Affiliation:
Now at AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
Alice E. Whitea
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
K. T. Short
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
C. W. Tu
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

We review and discuss the main structural phenomena inherent in epitaxial multilayer semiconductor growth: lattice mismatch, misfit dislocation generation, two-dimensional vs. threedimensional growth, interface abruptness and planarity and the local atomic structure of semiconductor alloys. The prevalence of metastable structures, often a function of crystal growth temperature, is discussed. We also investigate the effect of Si ion implantation and subsequent rapid thermal annealing of AlGaAs/GaAs and InGaAs/GaAs multilayer structures, with reference to strain relaxation, layer planarity and enhanced Al, In and Si diffusion.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 153
Copyright
Copyright © Materials Research Society 1987

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References

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