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Self-Assembled Iii-Phospide Quantum Dots Grown by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

Jae-Hyun Ryou ,
Uttiya Chowdhury ,
Russell D. Dupuis ,
Chavva V. Reddy ,
Venkatesh Narayanamurti ,
David T. Mathes  and
Robert Hull
Jae-Hyun Ryou
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712-1100, dupuis@mail.utexas.edu
Uttiya Chowdhury
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712-1100, dupuis@mail.utexas.edu
Russell D. Dupuis
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712-1100, dupuis@mail.utexas.edu
Chavva V. Reddy
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
Venkatesh Narayanamurti
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
David T. Mathes
Affiliation:
Department of Materials Science and Engineering, The University of Virginia, Charlottesville, VA 22906
Robert Hull
Affiliation:
Department of Materials Science and Engineering, The University of Virginia, Charlottesville, VA 22906
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Abstract

We report InP self-assembled quantum dots embedded in In0.51Al0.49P grown by metalorganic chemical vapor deposition. Growth parameters are altered to study the InP quantum-dot growth characteristics under various growth conditions. Quantum-dot morphology is characterized using atomic-force microscopy. Also, photoluminescence studies of the light-emitting properties are performed. Direct-bandgap ternary InxAlI−xP (x=˜0.7, ˜0.85) self-assembled quantum dots are also grown and compared with InP quantum dots.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 39
Copyright
Copyright © Materials Research Society 2000

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References

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