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Selection and Design of Precursors for the MOCVD of Lead Scandium Tantalate

Published online by Cambridge University Press:  10 February 2011

A.C Jones ,
H.O. Davies ,
T.J. Leedham ,
M.J. Crosbie ,
P.J. Wright ,
P.O'. Brien  and
K.A. Fleeting
A.C Jones
Affiliation:
Inorgtech Limited, 25 James Carter Road, Mildenhall, Suffolk, IP28 7DE, UK. tony@inorgtech.co.uk
H.O. Davies
Affiliation:
Inorgtech Limited, 25 James Carter Road, Mildenhall, Suffolk, IP28 7DE, UK. tony@inorgtech.co.uk
T.J. Leedham
Affiliation:
Inorgtech Limited, 25 James Carter Road, Mildenhall, Suffolk, IP28 7DE, UK. tony@inorgtech.co.uk
M.J. Crosbie
Affiliation:
Defence, Evaluation and Research Agency, St. Andrews Road, Malvern, Worcestershire, WR14 3PS, UK
P.J. Wright
Affiliation:
Defence, Evaluation and Research Agency, St. Andrews Road, Malvern, Worcestershire, WR14 3PS, UK
P.O'. Brien
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, London, SW7 2BP, UK
K.A. Fleeting
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, London, SW7 2BP, UK
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Abstract

Metalorganic chemical vapour deposition (MOCVD) is a promising technique for the deposition of the pyroelectric oxide lead scandium tantalate, Pb(Sc0.5Ta0.5)O3. In order to exploit the full potential of the method, it is important to identify the optimum combination of precursors so that process parameters and film properties are optimised. In this paper, the molecular design of new, more compatible Ta and Sc oxide precursors is described and it is shown how the use of carefully matched precursors allows the growth of Pb(Sc0.5Ta0.5)O3 in the required perovskite phase at low substrate temperatures.

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References

1 Whatmore, R.W., Stringfellow, S.B. and Shorrocks, N.M., Infrared Technology, XIX, 391 (1993).Google Scholar
2 Liu, D., Payne, D.A. and Viehland, D.D., Mater. Lett., 17, 319 (1993).Google Scholar
3 Ainger, F.W., Bass, K., Brierly, C.J., Hudson, M.D., Trundle, C. and Whatmore, R.W., Progr. Cryst. Growth Charact., 22, 183 (1991).Google Scholar
4 Liu, D. and Chen, H., Mater. Lett., 28, 17 (1996).Google Scholar
5 Jones, A.C., Leedham, T.J., Wright, P.J., Crosbie, M.J., Lane, P.A., Williams, D.J., Fleeting, K.A., Otway, D.J. and O'Brien, P., Chem. Vap. Deposition, 4, 46 (1998).Google Scholar
6 Davies, H.O., Leedham, T.J., Jones, A.C., O'Brien, P., White, A.J.P. and Williams, D.J., Polyhedron, in press.Google Scholar
7 Pollard, K.D., Puddephat, R.J., Chem. Mater., 11, 106 (1999).Google Scholar
8 Luten, H.A., Rees, W.S. and Goedken, V.L., Chem. Vap. Deposition, 2, 149 (1996).Google Scholar
9 Fleeting, K.A., Davies, H.O., Jones, A.C., O'Brien, P., Leedham, T.J., Crosbie, M.J., Wright, P.J. and Williams, D.J., Chem. Vap. Deposition, in press.Google Scholar