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Selected Energy Epitaxy of Gallium Nitride

Published online by Cambridge University Press:  10 February 2011

R. K. Chilukuri ,
Suian Zhang ,
E. Chen ,
R. F. Davis  and
H. H. Lamb
R. K. Chilukuri
Affiliation:
Department of Chemical Engineering, North Carolina State University, Raleigh, NC 27695–7905
Suian Zhang
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7905
E. Chen
Affiliation:
Department of Chemical Engineering, North Carolina State University, Raleigh, NC 27695–7905
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7905
H. H. Lamb
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7905
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Abstract

A new apparatus for III-V nitride growth by selected energy epitaxy (SEE) is described. The multi-chamber system comprises a doubly differentially pumped molecular beam source, UHV-compatible growth chamber, x-ray photoelectron spectroscopy (XPS) chamber, UHV transfer line, and loadlock. The growth chamber is equipped for in situ quadrupole mass spectrometry and reflection high-energy electron diffraction (RHEED). Preliminary results of GaN SEE using hyperthermal beams of trimethylgallium (TMG) and ammonia (NH3) are presented.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 355
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Pankove, J. I., Mater. Res. Soc. Proc. 162, 515 (1990).Google Scholar
2. Nakamura, S., Jpn. J. Appl. Phys. 30, L1705 (1991).Google Scholar
3. Lorenz, M. R. and Binkowski, B. B., J. Electrochem. Soc. 109, 24 (1962).Google Scholar
4. Eddy, C. R. Jr., Moustakas, T. D. and Scanlon, J., J. Appl. Phys. 73, 448 (1993).Google Scholar
5. Wang, C. and Davis, R. F., Appl. Phys. Lett. 63, 990 (1993).Google Scholar
6. Pacheco, K. A., Ferguson, B. A., Li, C., John, S., Banerjee, S. and Mullins, C. B., App. Phys. Lett. 67, 2951 (1995).Google Scholar
7. Lamb, H. H., Lai, K. K., Torres, V. and Davis, R. F., in “Film Synthesis and Growth Using Energetic Beams”, MRS Symp. Proc. 388, 265 (1995).Google Scholar
8. Sumakeris, J. J., Chilukuri, R. K., Davis, R. F. and Lamb, H. H., in “Gallium Nitride and Related Materials”, MRS Symp. Proc. 395 (1996).Google Scholar
9. Brown, K. A., Ustin, S. A., Lauhon, L. and Ho, W., J. Appl. Phys. 79, 7667 (1996).Google Scholar
10. Ceyer, S. T., Science, 249, 133 (1990).Google Scholar
11. Engstrom, J. R., Hansen, D. A., Furjanic, M. J. and Xia, L. Q., J. Chem. Phys, 99. 4051 (1993).Google Scholar