Hostname: page-component-54dcc4c588-ff9ft Total loading time: 0 Render date: 2025-10-10T14:43:32.010Z Has data issue: false hasContentIssue false
  • English
  • Français

Schottky Barriers on Magnetron Sputtered a-Si:H: Depletion width Effects on Photocarrier Collection vs Bandgap and Light Soaking

Published online by Cambridge University Press:  21 February 2011

James R. Doyle ,
N. Maley  and
John R. Abelson
James R. Doyle
Affiliation:
Coordinated Science Laboratory and Department of Materials Science, The University of Illinois, 1101 W. Springfield Ave., Urbana IL 61801.
N. Maley
Affiliation:
Coordinated Science Laboratory and Department of Materials Science, The University of Illinois, 1101 W. Springfield Ave., Urbana IL 61801.
John R. Abelson
Affiliation:
Coordinated Science Laboratory and Department of Materials Science, The University of Illinois, 1101 W. Springfield Ave., Urbana IL 61801.
Get access

Abstract

We present a study of depletion width effects on the photocarrier collection efficiency in reactive magnetron sputtered a-Si:H films. Results are presented for as-deposited and light soaked 1.75 eV optical gap samples, and an as-deposited 1.60 eV gap film. The depletion width behavior with reverse bias is inferred from capacitance measurements. Comparison with photocurrent collection versus reverse bias voltage suggests that space charge effects can have an important role in the interpretation of collection efficiency on Schottky barriers.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 111
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Chu, V., Conde, J.P., Shen, D.S., and Wagner, S., Appl. Phys. Lett. 55, 62 (1989).Google Scholar
2. Wronski, C.R., Smith, Z E., Aljishi, S., Chu, V., Shepard, K., Shen, D.S., Schwartz, R., Slobodin, D., and Wagner, S., in AIP Conference Proceedings No. 157. edited by Stafford, B. and Sabisky, E. (AIP, New York, 1987), p.70.CrossRefGoogle Scholar
3. Doyle, J.R., Maley, N., and Abelson, J.R., presented at the International Meeting on the Stability of Amorphous Silicon 1991 (to be published as AIP Conference Proceedings).Google Scholar
4. Pinarbasi, M., Kushner, M.J., and Abelson, J.R., J. Appl. Phys. 68, 2255 (1990).CrossRefGoogle Scholar
5. Crandall, R. S., J. Appl. Phys. 54, 7176 (1983).CrossRefGoogle Scholar
6. Crandall, R.S., Williams, R., and Tompkins, B.E., J. Appl. Phys. 50, 5506 (1979).CrossRefGoogle Scholar
7. David Cohen, J., in Semiconductors and Semimetals vol. 21C. edited by Pankove, J.I. (Academic Press, Orlando FL, 1984), p. 29.Google Scholar