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Scandium And Gallium Implantation Doping Of Silicon Carbide

Published online by Cambridge University Press:  10 February 2011

T. Henkel ,
Y. Tanaka ,
N. Kobayashi ,
I. Koutzarov ,
H. Okumura ,
S. Yoshida  and
T. Ohshima
T. Henkel
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305–8568, Japan
Y. Tanaka
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305–8568, Japan
N. Kobayashi
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305–8568, Japan
I. Koutzarov
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305–8568, Japan
H. Okumura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305–8568, Japan
S. Yoshida
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305–8568, Japan
T. Ohshima
Affiliation:
Japan Atomic Energy Research Institute, 1233 Watanuki, Tkasaki, Gunma 370–1292, Japan
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Abstract

Rutherford backscattering, Raman spectroscopy as well as photoluminescence, resistivity and Hall measurements have been used to investigate the doping behaviour of Scandium and Gallium ions implanted into Silicon Carbide respectively. The recovery of the crystal lattice after implantation at room temperature followed by rapid thermal annealing is shown to be less effective in the case of Scandium compared with Gallium. Scandium implanted SiC exhibited a high resistivity in comparison to Gallium implanted crystals.

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References

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