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The Role of Trapped Interstitials During Rapid Thermal Annealing

Published online by Cambridge University Press:  26 February 2011

S. J. Pennycook  and
R. J. Culbertson
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
R. J. Culbertson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

During the rapid thermal annealing of ion implanted layers, trapped interstitials are responsible for transient enhanced dopant diffusion and the formation of a band of defects at the mean projected ion range. We describe the detailed nature and extent of these effects and show how they can be predicted in practice. We present a model which explains why trapping only occurs with group V implantation and describe double implantation experiments which confirm the model and show how the formation of projected range defects can be suppressed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 37
Copyright
Copyright © Materials Research Society 1986

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