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A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient

Published online by Cambridge University Press:  15 March 2011

S. Rao ,
S.E. Saddow ,
F. Bergamini ,
R. Nipoti ,
Y. Emirov  and
Anant Agrawal
S. Rao
Affiliation:
Electrical Engineering, Univ. of South Florida, Tampa, FL 33620, USA
S.E. Saddow
Affiliation:
Electrical Engineering, Univ. of South Florida, Tampa, FL 33620, USA
F. Bergamini
Affiliation:
CNR - IMM Sezione di Bologna, via Gobetti 101, I-40129 Bologna, Italy
R. Nipoti
Affiliation:
CNR - IMM Sezione di Bologna, via Gobetti 101, I-40129 Bologna, Italy
Y. Emirov
Affiliation:
Electrical Engineering, Univ. of South Florida, Tampa, FL 33620, USA
Anant Agrawal
Affiliation:
Cree, Inc., 4600 Silicon Drive, Durham, NC 27703, USA
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Abstract

High-dose Al implants in n-type epitaxial layers have been successfully annealed at 1600°C without any evidence of step bunching. Anneals were conducted in a silane ambient and at a process pressure of 150 Torr. Silane, 3% premixed in 97% UHP Ar, was further diluted in a 6 slm Ar carrier gas and introduced into a CVD reactor where the sample was heated via RF induction. A 30 minute anneal was performed followed by a purge in Ar at which time the RF power was switched off. The samples were then studied via plan-view secondary electron microscopy (SEM) and atomic force microscopy (AFM). The resulting surface morphology was step- free and flat.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J1.5
Copyright
Copyright © Materials Research Society 2004

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References

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