Hostname: page-component-84c44f86f4-tngzx Total loading time: 0 Render date: 2025-10-14T11:46:56.619Z Has data issue: false hasContentIssue false
  • English
  • Français

Reversible Photo-Induced Currents in Epitaxial Pb(Zr0.52Ti0.48)O3 Thin Films

Published online by Cambridge University Press:  21 February 2011

J. Lee ,
S. Esayan ,
J. Prohaska  and
A. Safari
J. Lee
Affiliation:
Department of Ceramic Science and Engineering, Rutgers-The State University of New Jersey, Piscataway, NJ 08855-0909, USA
S. Esayan
Affiliation:
Department of Ceramic Science and Engineering, Rutgers-The State University of New Jersey, Piscataway, NJ 08855-0909, USA
J. Prohaska
Affiliation:
Department of Ceramic Science and Engineering, Rutgers-The State University of New Jersey, Piscataway, NJ 08855-0909, USA
A. Safari
Affiliation:
Department of Ceramic Science and Engineering, Rutgers-The State University of New Jersey, Piscataway, NJ 08855-0909, USA
Get access

Abstract

The pyroelectric and photogalvanic effects have been studied extensively in epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) thin films. For the first time, photo-induced currents, which were completely reversible by electrical voltage, were observed in ferroelectric thin films. The photo-induced currents exhibited transient and steady state components. The transient component, in turn, consisted of two components with fast (<1 µs) and slow (∼hours) relaxation times. The mechanisms of the photo-induced currents in PZT films and their possible application in non-destructive readout ferroelectric memory are discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 107
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Scott, J. F. and Araujo, C. A. Pas de, Science 246, 1400, (1989).Google Scholar
2. Sinharoy, S., Buhay, H., Francombe, M. H., Takei, W. J., Doyle, N. J., Rieger, J. H., Lampe, D. R. and Stepke, E., J. Vac. Sci. Technol. A 9, 409, (1991).Google Scholar
3. Sinharoy, S., Buhay, H., Kasner, W. H., Francombe, M. H., Lampe, D. R. and Stepke, E., Appl. Phy. Lett. 58, 1470, (1991).Google Scholar
4. Brody, P. S., Appl. Phys. Lett. 38, 153, (1981).Google Scholar
5. Brody, P. S. and Rod, B. J., Proceedings of 3rd Internal Symposium on Integrated Ferroelectrics, Colorado Springs, Colorado, 1991, p. 251.Google Scholar
6. Tharkoor, S., Thakoor, A. P. and Bernacki, S. E., Proceedings of 3rd International Symposium on Integrated Ferroelectrics, Colorado Springs, Colorado, 1991, p. 262.Google Scholar
7. Yu, G., Boikov, A., Esayan, S. K., Ivanov, Z. G., Ororsson, G., Claeson, T., Lee, J. and Safari, A., Appl. Phy. Lett. 61, 528, (1992).Google Scholar
8. Lee, J., Johnson, L., Safari, A., Ramesh, R., Sands, T., Gilchrist, H. and Keramidas, V. G., Appl. Phys. Lett., to be published.Google Scholar
9. Sturman, B. I. and Fridkin, V. M., The Photovoltaic and Photorefractive Effects in Noncentrosymmetric Materials, Gordon and Breach Science Publishers, 1992.Google Scholar
10. Fridkin, V. M., Photoferkelectrics, Springer-Verlag, New-York, 1979.CrossRefGoogle Scholar
11. Smyth, D. M., Ferroelectrics, 116, 117, (1991).Google Scholar