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Response Time of a-Si:H Photosensors in Optically Addressed Spatial Light Modulators

Published online by Cambridge University Press:  21 February 2011

Garret Moddel  and
Pierre R. Barbier
Garret Moddel
Affiliation:
Department of Electrical and Computer Engineering, and Optoelectronic, Computing Systems Center, University of Colorado, Boulder, CO 80309–0425
Pierre R. Barbier
Affiliation:
Department of Electrical and Computer Engineering, and Optoelectronic, Computing Systems Center, University of Colorado, Boulder, CO 80309–0425
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Abstract

A successful application for a-Si:H is as the photosensor in a liquid crystal optically addressed spatial light modulator (OASLM). We analyze the response time of an a-Si:H p-i-n photodiode in a “pseudo-OALSM,” in which the liquid crystal is replaced by an equivalent capacitor, under both forward and reverse bias. Under reverse bias the two important effects are the photocurrent response time, and residual trapped charge. Under forward bias the mechanism shifts from double injection regimes to ohmic transport as a function of voltage. We relate these characteristics to the operation of an OASLM.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 155
Copyright
Copyright © Materials Research Society 1991

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