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Removal Rate, Uniformity and Defectivity Studies of Chemical Mechanical Polishing of BPSG Films

Published online by Cambridge University Press:  14 March 2011

Benjamin A. Bonner ,
Boris Fishkin ,
Jeffrey David ,
Chad Garretson  and
Thomas H. Osterheld
Benjamin A. Bonner
Affiliation:
CMP Division, Applied Materials 3111 Coronado Drive, Santa Clara, CA 95054
Boris Fishkin
Affiliation:
CMP Division, Applied Materials 3111 Coronado Drive, Santa Clara, CA 95054
Jeffrey David
Affiliation:
CMP Division, Applied Materials 3111 Coronado Drive, Santa Clara, CA 95054
Chad Garretson
Affiliation:
CMP Division, Applied Materials 3111 Coronado Drive, Santa Clara, CA 95054
Thomas H. Osterheld
Affiliation:
CMP Division, Applied Materials 3111 Coronado Drive, Santa Clara, CA 95054
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Abstract

Wafers where deposited with BPSG films having phosphorus concentration varying from 3.65 to 6.25% and boron concentration varying from 4 to 5.7%. These wafers were polished using CMP and the rates were found to depend on dopant concentrations. A fit to the data indicated that removal rates were more than 3 times as sensitive to boron concentration compared to phosphorus concentration. For a constant phosphorus concentration of 5%, each percent increase in boron increases CMP removal rate by 340 Å/min. For a constant boron concentration of 5%, each percent increase in phosphorus increases CMP removal rate by 96 Å/min.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 613: Symposium E – Chemical-Mechanical Polishing 2000 - Fundamentals… , 2000 , E8.6.1
Copyright
Copyright © Materials Research Society 2000

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References

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