Hostname: page-component-54dcc4c588-tfzs5 Total loading time: 0 Render date: 2025-10-09T04:20:47.765Z Has data issue: false hasContentIssue false
  • English
  • Français

Refractory Metal Encapsulation in Copper Wiring

Published online by Cambridge University Press:  25 February 2011

J. Palleau ,
J.C. Oberlin ,
F. Braud ,
J. Torres ,
J. L. Mermet ,
M- J Mouche ,
A. Ermolieff  and
J. Piaget
J. Palleau
Affiliation:
F.T. / CNET, BP 98, 38243 Meylan cedex, France
J.C. Oberlin
Affiliation:
F.T. / CNET, BP 98, 38243 Meylan cedex, France
F. Braud
Affiliation:
F.T. / CNET, BP 98, 38243 Meylan cedex, France
J. Torres
Affiliation:
F.T. / CNET, BP 98, 38243 Meylan cedex, France
J. L. Mermet
Affiliation:
CEA / DTA / LETI, 85X, 38041 Grenoble cedex, France
M- J Mouche
Affiliation:
CEA / DTA / LETI, 85X, 38041 Grenoble cedex, France
A. Ermolieff
Affiliation:
CEA / DTA / LETI, 85X, 38041 Grenoble cedex, France
J. Piaget
Affiliation:
CEA / DTA / LETI, 85X, 38041 Grenoble cedex, France
Get access

Abstract

The thermal stability at the Cu / SiO2 interface has been studied as a function of the annealing atmosphere composition. Using either good vacuum conditions or refractory metal encapsulation, no copper diffusion into SiO2 has been found even for thermal treatments at 500°C for l0h. Moreover, a noticeable accumulation of the refractory metal, ( Cr, Ti ), at the Cu / SiO2 interface has been observed. The diffusion phenomena allows the self-aligned formation of a refractory metal barrier layer at the SiO2 surface.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 Li, J., Y. Shaman -, Diamand and Mayer, J. W., Mater. Sci. Rep. 9, 1 ( 1992 )Google Scholar
2 Wang, S. Q. and Mayer, J. W., J. Appl. Phys. 67, 2932 ( 1990 )CrossRefGoogle Scholar
3 Li, J., Chapman, P., Goodwin, F., Y. Shacham -, Diamand and Mayer, J. W., in Advanced Metallization for ULSI Applications 1992, edited by Cale, T. S. and Pintchovski, E. S. (Adv. Metallization ULSI Applic. Proc., Pittsburgh, PA, 1993 ) p. 75 Google Scholar
4 Liotard, J. L., Gupta, D., Psaras, P. A. and Ho, P. S., J. Appl. Phys. 57, ( 1985 ), p. 1895 Google Scholar