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Reduction of Si-H2 Bond Content in Hydrogenated Amorphous Silicon Prepared by Mercury-Sensitized Photochemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

N. Sakuma ,
H. Nozaki ,
T. Niiyama  and
H. Ito
N. Sakuma
Affiliation:
R&D Center, Toshiba Corporation, 1, Komukai, Toshiba-cho, Saiwai-ku, Kawasaki, 210, Japan
H. Nozaki
Affiliation:
R&D Center, Toshiba Corporation, 1, Komukai, Toshiba-cho, Saiwai-ku, Kawasaki, 210, Japan
T. Niiyama
Affiliation:
R&D Center, Toshiba Corporation, 1, Komukai, Toshiba-cho, Saiwai-ku, Kawasaki, 210, Japan
H. Ito
Affiliation:
R&D Center, Toshiba Corporation, 1, Komukai, Toshiba-cho, Saiwai-ku, Kawasaki, 210, Japan
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Abstract

The ratio of Si-H2 bonds to hydrogen content in hydrogenated amorphous silicon films, prepared by mercury-sensitized photochemical vapor deposition, depends on the deposition conditions, in particular on the distance between the substrate and the light-transparent window.

The ratio is reduced from 20 % to 8 % by decreasing the distance from 30 mm to 8 mm. On the other hand, the hydrogen content remains constant at 15 at.%. Decreasing the distance has been found to be almost equivalent to increasing the light intensity, especially 254 nm-light intensity.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 517
Copyright
Copyright © Materials Research Society 1990

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References

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