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Reduction of Internal Stress of a-Si:H Films by in Situ Measurements of Optical Emission Intensity from SiH4 Plasma

Published online by Cambridge University Press:  25 February 2011

K. Tamahashi ,
M. Wakagi ,
F. Ishikawa ,
T. Kaneko ,
K. Tamura ,
A. Satoh  and
M. Hanazono
K. Tamahashi
Affiliation:
Hitachi Research Lab., Hitachi, Ltd., Hitachi City, Ibaraki, Japan.
M. Wakagi
Affiliation:
Hitachi Research Lab., Hitachi, Ltd., Hitachi City, Ibaraki, Japan.
F. Ishikawa
Affiliation:
Hitachi Research Lab., Hitachi, Ltd., Hitachi City, Ibaraki, Japan.
T. Kaneko
Affiliation:
Hitachi Research Lab., Hitachi, Ltd., Hitachi City, Ibaraki, Japan.
K. Tamura
Affiliation:
Hitachi Research Lab., Hitachi, Ltd., Hitachi City, Ibaraki, Japan.
A. Satoh
Affiliation:
Hitachi Research Lab., Hitachi, Ltd., Hitachi City, Ibaraki, Japan.
M. Hanazono
Affiliation:
Hitachi Research Lab., Hitachi, Ltd., Hitachi City, Ibaraki, Japan.
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Abstract

A parameter which determine internal stress of hydrogenated amorphous silicon (a-Si:H) prepared by plasma CVD method has been investigated to prevent a peeling off or crack forming problem. It is clarified that the internal stress changes from tension to compression as a function of supplied rf power density during deposition process. Supplied rf power density is closely connected to H o and SiH* optical emission intensity ratio (H α /SiH* ) of CVD plasma. Ve find that the internal stress can be reduced remarkably by controlling this ratio to 0.3. This H α/SiH* parameter has a superiority that the internal stress can be in situ controlled.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 621
Copyright
Copyright © Materials Research Society 1990

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References

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