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Recombination of Optically Excited Carriers in a-Si:H at Low temperatures and Intermediate Times

Published online by Cambridge University Press:  01 February 2011

J. Whitaker ,
T. Su  and
P. C. Taylor
J. Whitaker
Affiliation:
Department of Physics, University of Utah, 115 South 1400 East Room 201, Salt Lake City UT 84112-0830
T. Su
Affiliation:
Department of Physics, University of Utah, 115 South 1400 East Room 201, Salt Lake City UT 84112-0830
P. C. Taylor
Affiliation:
Department of Physics, University of Utah, 115 South 1400 East Room 201, Salt Lake City UT 84112-0830
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Abstract

Optically induced electron spin resonance (LESR) studies on time scales in between the previously published PL and LESR results (approximately 10 ms to 10 s) allow one to examine the cross over between energy-loss (downward) hopping of carriers and carrier recombination via tunneling. In addition, data in this time regime are directly compared in the same sample with NMR data on the dipolar spin-lattice relaxation of the bonded hydrogen where light induced electrons and holes are responsible for dipolar relaxation of bonded hydrogen. The LESR results confirm the interpretation of the NMR measurements.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A2.4
Copyright
Copyright © Materials Research Society 2002

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