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Recombination Lifetime in Microcrystalline Silicon Absorbers of Highly Efficient Thin-Film Solar Cells

Published online by Cambridge University Press:  01 February 2011

Torsten Brammer  and
Helmut Stiebig
Torsten Brammer
Affiliation:
Institute of Photovoltaics, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Helmut Stiebig
Affiliation:
Institute of Photovoltaics, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
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Abstract

Absorber layers of microcrystalline silicon thin-film solar cells deposited by plasma-enhanced chemical vapor deposition are characterized regarding the recombination lifetime. The characterization is based on a comparison of experimentally determined solar cell characteristics with results from numerical device simulations. Evaluation of the dark reverse saturation current indicates a strong dependence of τ on the hydrogen dilution during the deposition. Close to the transition region to amorphous growth where the highest solar cell efficiencies are observed τ is maximum within the crystalline deposition regime and equals 30 ns.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A6.2
Copyright
Copyright © Materials Research Society 2002

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References

[1] Klein, S., Finger, F., Carius, R., Kluth, O., Baia Neto, L., Wagner, H., and Stutzmann, M., Proc. 17th EC-PVSEC, Munich, Germany (2001).Google Scholar
[2] Repmann, T., Appenzeller, W., Roschek, T., Rech, B., Kluth, O., Wagner, H., Proc. 17th ECPVSEC, Munich, Germany (2001).Google Scholar
[3] Yamamoto, K., Yoshimi, M., Tawada, Y., Fukuda, S., Meguro, T., Takata, H., Takashi, S., Koi, Y., Hayashi, K., Suzuki, T., Nakajima, A., Tech. Dig. Int'l PVSEC-12, Jeju, Korea, ISSN 1598-2173, 547–548 (2001)Google Scholar
[4] Luysberg, M., Scholten, C., Houben, L., Vetterl, O., Carius, R., Finger, F., Mat. Res. Soc. Symp. Proc. 664, A15.2 (2001).Google Scholar
[5] Vetterl, O., Finger, F., Carius, R., Hapke, P., Houben, L., Kluth, O., Lambertz, A., Mück, A., Rech, B., Wagner, H., Solar Energy Materials & Solar Cells, 62, 97 (2000).10.1016/S0927-0248(99)00140-3Google Scholar
[6] Finger, F., Klein, S., Dylla, T., Baia, A.L. Neto, Vetterl, O. and Carius, R., this conference.Google Scholar
[7] Vetterl, O., Groβ, A., Jana, T., Ray, S., Lambertz, A., Carius, R. and Finger, F., Journal of Non-Crystalline Solids, in press.Google Scholar
[8] Kurata, M., Numerical analysis for semiconductor devices, Lexington Books (1982).Google Scholar
[9] Brammer, T., Birmans, F., Krause, M., Stiebig, H., and Wagner, H., Mat. Res. Soc. Symp. Proc. 664, A19.6 (2001).10.1557/PROC-664-A19.6Google Scholar
[10] Matsui, T., Tsukiji, M., Saika, H., Toyama, T., Okamoto, H., Techn. Dig. Int. PVSEC-12, Jeju, Korea, ISSN 1598-2173, 355–356 (2001).Google Scholar
[11] Rech, B., private communications (2001).Google Scholar
[12] Sze, S.M., Physics of semiconductor devices, (John Wiley and Sons) (1981).Google Scholar
[13] Brammer, T., PhD Thesis, University of Düsseldorf, Germany, http://www. ulb.uni-duesseldorf.de/diss/mathnat/2002/brammer.html (2002), in German.Google Scholar
[14] Aberle, A., Heiser, G., Green, M.A., J. Appl. Phys. 75(10), 5391–5405 (1994).10.1063/1.355694Google Scholar
[15] Müller, J., PhD Thesis, University of Aachen, ISSN 0944-2952 (1998), in English.Google Scholar
[16] Kanschat, P., Mell, H., Lips, K., Fuhs, W., Mat. Res. Soc. Symp. Proc. 609, A27.3 (2000).Google Scholar
[17] Rech, B., Beyer, W., private communications (2002).Google Scholar
[18] Brendel, R., Bergmann, R.B., Lölgen, P., Wolf, M., Werner, J.H., Appl. Phys. Lett. 70(3), 390–392 (1997).Google Scholar
[19] Catchpole, K.J., Weber, K.J., Sproul, A.B., Blakers, A.W., Proc. 2nd WCPVSC, 1336 (1998).Google Scholar
[20] Rohatgi, A., Ebong, A., Yelundur, V., Ristow, A., Progr. in Photovoltaics 8, 515–525 (2000).10.1002/1099-159X(200009/10)8:5<515::AID-PIP351>3.0.CO;2-Q3.0.CO;2-Q>Google Scholar
[21] Cuevas, A., Stocks, M., Armand, S., Stuckings, M., Blakers, A.W., Ferrazza, F., Appl. Phys. Lett. 70(8), 1017–1019 (1997).10.1063/1.118469Google Scholar
[22] Glunz, S.W., Rein, S., Warta, W., Knobloch, J., Wettling, W., Sol. Eng. Mat. and Solar Cells 65 219–229 (2001).10.1016/S0927-0248(00)00098-2Google Scholar
[23] Cuevas, A., Sol. Eng. Mat. and Solar Cells 57, 277–290 (1999).10.1016/S0927-0248(98)00179-2Google Scholar