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Recombination and Electronic Transport in Low-Gap a-Si,Ge:H,F Alloys

Published online by Cambridge University Press:  26 February 2011

S. Aljishi ,
D. S. Shen ,
V. Chu ,
Z E. Smith ,
J. P. Conde ,
J. Kolodzey ,
D. Slobodin  and
S. Wagner
S. Aljishi
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
D. S. Shen
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
V. Chu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
Z E. Smith
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
J. P. Conde
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
J. Kolodzey
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
D. Slobodin
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

We have studied the temperature and intensity dependence (130K to 300K) of photo- and dark conductivity in a series of low-gap a-Si,Ge:H,F alloys (Eopt=1.25 to 1.33 eV) prepared under different deposition conditions. Electron time of flight experiments were conducted between 300K and 400K. Results reveal an increase in the slope of the exponential conduction band tail to ∼ 50 meV and a peak in electron trapping states at 0.3 to 0.4 eV below the conduction band edge, leading to a transition from extended to hopping conduction by electrons at slightly below room temperature. The alloys have midgap defect densities in the low 1017 cm−3eV−1 range.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 323
Copyright
Copyright © Materials Research Society 1987

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